byv32?50m 0 byv32?100m byv32?150m byv32?200m v rrm peak repetitive reverse voltage v rwm working peak reverse voltage v r continuous reverse voltage i frm repetitive peak forward current t p = 10 s i f(av) average forward current t case = 70c (switching operation, = 0.5, both diodes conducting) i fsm surge non repetitive forward current t p = 10 ms t stg storage temperature range t j maximum operating junction temperature 50v 100v 150v 200v 50v 100v 150v 200v 50v 100v 150v 200v 200a 20a 80a ?65 to 200c 200c hermetically sealed dual fast recovery silicon rectifier for hi?rel applications ? standard (common cathode) ? common anode ? series connection features ? hermetic to220 metal or ceramic surface mount package ? screening options available ? all leads iolated from case ? voltage range 50 to 200v ? average current 20a ? ultra fast reverse recovery time ? t rr = 35ns max ? very low switching losses absolute maximum ratings (t case = 25c unless otherwise stated) byv32 ?50m byv32 ?100m byv32 ?150m byv32 ?200m applications include secondary rectification in high frequency switching power supplies. mechanical data dimensions in mm 16.5 13.5 10.6 13.70 2.54 bsc 10.6 3.6 dia. 0.8 4.6 1.0 2.70 bsc 123
to220 metal smd1 ceramic surface mount byv32-xxxm byv32-xxxam byv32-xxxrm 1 = a 1 anode 1 2 = k cathode 3 = a 2 anode 2 1 = k 1 cathode 1 2 = a anode 3 = k 2 cathode 2 1 = k 1 cathode 1 2 = centre tap 3 = a 2 anode common cathode common anode series connection electrical connections semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 7099 issue 2
byv32?50m 0 byv32?100m byv32?150m byv32?200m parameter test conditions min. typ. max. unit i r reverse current v f * forward voltage t rr ** reverse recovery time q rr ** recovered charge v fp ** forward recovery overvoltage v r = v rwm t j = 25c v r = v rwm t j = 100c i f = 8a t c = 25c i f = 20a t c = 25c i f = 5a t c = 100c i f = 1a v r = 30v di / dt = 50a/ s i f = 2a v r = 30v di / dt = 20a/ s di / dt = 10a/ si f = 1a 30 0.6 1.1 1.5 0.95 35 15 1.0 a ma v ns nc v electrical characteristics (per diode) (t case = 25c unless otherwise stated) * pulse test: t p 300 s, duty cycle 2%. ** ac parameters guaranteed by design r jc ? thermal resistance junction ? case 1.6 c/w thermal characteristics (to220 metal case) ? both diodes conducting. semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 7099 issue 2
|
